1 - 2 ? 2000 ixys all rights reserved 022 i d25 = 22 a v dss = 1000 v r dson = 390 m hiperfet tm power mosfet i n high voltage isoplus i4-pac tm advanced technical information ixff 24n100 features ? hiperfet tm technology - low r dson - low gate charge for high frequency operation - unclamped inductive switching (uis) capability - dv/dt ruggedness - fast intrinsic reverse diode isoplus i4-pac tm high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline applications switched mode power supplies dc-dc converters resonant converters 1 5 mosfets symbol conditions maximum ratings v dss t vj = 25c to 150c 1000 v v gs 20 v i d25 t c = 25c 22 a i d90 t c = 90c 15 a i f25 (diode) t c = 25c 120 a i f90 (diode) t c = 90c 75 a dv/dt v ds < v dss ; i f 100a; di f /dt 100a/s; r g = 2 5 v/ns t vj = 150c e ar t c = 25c 64 mj symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. r dson v gs = 10 v; i d = i d90 390 m v gsth v ds = 20 v; i d = 8 ma; 2.5 5 v i dss v ds = v dss ; v gs = 0 v; t vj = 25c 0.1 ma t vj = 125c 0.25 ma i gss v gs = 20 v; v ds = 0 v 200 na q g 250 nc q gs 55 nc q gd 135 nc t d(on) 35 ns t r 35 ns t d(off) 75 ns t f 21 ns v f (diode) i f = 12 a; v gs = 0 v 1.5 v t rr (diode) i f = 24 a; -di/dt = 100 a/s; v ds = 100 v 250 ns r thjc 0.32 k/w ixys reserves the right to change limits, test conditions, and dimensions.
2 - 2 ? 2000 ixys all rights reserved ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixff 24n100 component symbol conditions maximum ratings t vj -55...+150 c t stg -55...+125 c v isol i isol 1 ma; 50/60 hz 2500 v~ f c mounting force with clip 20...120 n symbol conditions characteristic values min. typ. max. d s ,d a d pin - s pin 7.0 mm d s ,d a pin - backside metal 5.5 mm r thch with heatsink compound 0.15 k/w weight 9g dimensions in mm (1 mm = 0.0394")
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